Trimethylsilane (3MS,(SiH(CH3)3)
It is a deposition gas for the formation of an interlayer planarization insulating film (SiO2)
between semiconductor metal lines and the gap filling process.
SPECIFICATION
Unit : ppmv3MS,SiH(CH3)3) | CO2 | CO | N2 | O2+Ar | Total Chlorides |
THC | H2O |
---|---|---|---|---|---|---|---|
99.999%(5N) [Excluded H2,CH4,Metal] |
0.5 | 0.5 | 2.0 | 0.5 | 1.0 | 1.0 | 0.5 |
3MS, SiH(CH3)3 | 99.999% (5N) [Excluded H2, CH4, Metal] |
---|---|
CO2 | 0.5 |
CO | 0.5 |
N2 | 2.0 |
O2+Ar | 0.5 |
Total Chlorides | 1.0 |
THC | 1.0 |
H2O | 0.5 |
CYLINDERS INFORMATION
TYPE | MATERIAL | FILLING WEIGHT | VALVE CONNECTION TYPE |
---|---|---|---|
47L | Cr-Mo Steel | 16 kg | CGA/DISS636 etc. |
TYPE | 47L |
---|---|
MATERIAL | Cr-Mo Steel |
FILLING WEIGHT | 16 kg |
VALVE CONNECTION TYPE | CGA/DISS632 etc. |